050-7042 rev c 9-2004 maximum ratings all ratings: t c = 25c unless otherwise specified. APT20M11JFLL 200v 176a 0.011 ?? ?? ? g d s caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com sot-227 g s s d isotop ? "ul recognized" lower input capacitance increased power dissipation lower miller capacitance easier to drive lower gate charge, qg popular sot-227 package fast recovery body diode power mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. both conduction and switchinglosses are addressed with power mos 7 ? by significantly lowering r ds(on) and q g . power mos 7 ? combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with apt'spatented metal gate structure. power mos 7 r fredfet characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 2 (v gs = 10v, i d = 88a) zero gate voltage drain current (v ds = 200v, v gs = 0v) zero gate voltage drain current (v ds = 160v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 5ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms ana volts min typ max 200 0.011 250 1000 100 35 APT20M11JFLL 200176 704 3040 694 5.56 -55 to 150 300176 50 3600 downloaded from: http:///
050-7042 rev c 9-2004 dynamic characteristics APT20M11JFLL z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.200.15 0.10 0.05 0 0.5 0.1 0.3 0.7 0.9 0.05 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm source-drain diode ratings and characteristics thermal characteristics characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -176a) peak diode recovery dv / dt 5 reverse recovery time(i s = -176a, di / dt = 100a/s) reverse recovery charge(i s = -176a, di / dt = 100a/s) peak recovery current(i s = -176a, di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps min typ max 176704 1.3 8 t j = 25c 250 t j = 125c 500 t j = 25c 0.9 t j = 125c 2.5 t j = 25c 12 t j = 125c 20 symbol r jc r ja min typ max 0.18 40 unitc/w characteristicjunction to case junction to ambient symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energyturn-on switching energy 6 turn-off switching energy test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 100v i d = 176a @ 25c resistive switching v gs = 15v v dd = 100v i d = 176a @ 25c r g = 0.6 ? inductive switching @ 25c v dd = 133v, v gs = 15v i d = 176a, r g = 5 ? inductive switching @ 125c v dd = 133v, v gs = 15v i d = 176a, r g = 5 ? min typ max 10320 4220 90 180 8065 24 65 55 9 11902485 1260 2815 unit pf nc ns j 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 0.23mh, r g = 25 ? , peak i l = 176a 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - i d 176a di / dt 700a/s v r v dss t j 150 c 6 eon includes diode reverse recovery. see figures 18, 20. apt reserves the right to change, without notice, the specifications and inforation contained herein. downloaded from: http:///
050-7042 rev c 9-2004 APT20M11JFLL typical performance curves v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model figu re 3, low voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds(on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, r ds(on) vs. temperature figure 9, threshold voltage vs temperature r ds(on) , drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs(th) , threshold voltage bv dss , drain-to-source breakdown r ds(on) , drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 7.5v 5.5v 6v 6.5 v gs =15 &10v 7v 8v t j = +125c t j = +25c t j = -55c v ds > i d (on) x r ds(on) max. 250sec. pulse test @ <0.5 % duty cycle v gs =10v v gs =20v 0 5 10 15 20 25 30 0 2 4 6 8 10 0 50 100 150 200 250 300 350 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 350300 250 200 150 100 50 0 180160 140 120 100 8060 40 20 0 2.52.0 1.5 1.0 0.5 0.0 i d = 88a v gs = 10v 300250 200 150 100 50 0 1.401.30 1.20 1.10 1.00 0.90 0.80 1.15 1.10 1.05 1.00 0.95 0.90 1.21.1 1.0 0.9 0.8 0.7 0.6 normalized to v gs = 10v @ i d = 88a 0.02680.109 0.0426 0.0456f0.765f 23.5f power (watts) junctiontemp. ( c) rc model case temperature. ( c) downloaded from: http:///
050-7042 rev c 9-2004 APT20M11JFLL v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11,capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 5 10 50 100 200 0 10 20 30 40 50 0 50 100 150 200 250 300 0.3 0.5 0.7 0.9 1.1 1.3 1.5 t c =+25c t j =+150c single pulse 704500 100 5010 16 14 12 10 86 4 2 0 i d = 176a 30,00010,000 1,000 100 5010 500100 5010 51 operation here limited by r ds (on) c rss c oss c iss 10ms 100s 1ms v ds =100v v ds =40v v ds =160v t j =+150c t j =+25c i d (a) i d (a) figure 14, delay times vs current figure 15, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 16, switching energy vs current figure 17, switching energy vs. gate resistance v dd = 130v r g = 5 ? t j = 125c l = 100h t d(on) t d(off) e on e off e on e off t r t f switching energy ( j) t d(on) and t d(off) (ns) switching energy ( j) t r and t f (ns) v dd = 130v r g = 5 ? t j = 125c l = 100h v dd = 130v i d = 176a t j = 125c l = 100h e on includes diode reverse recovery. v dd = 130v r g = 5 ? t j = 125c l = 100h e on includes diode reverse recovery. 30 60 90 120 150 180 210 240 270 30 60 90 120 150 180 210 240 270 30 60 90 120 150 180 210 240 270 0 5 10 15 20 25 30 35 40 45 50 160140 120 100 8060 40 20 0 80006000 4000 2000 0 300250 200 150 100 50 0 10000 80006000 4000 2000 0 downloaded from: http:///
050-7042 rev c 9-2004 APT20M11JFLL typical performance curves sot-227 (isotop ? ) package outline 31.5 (1.240)31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307)8.2 (.322) 30.1 (1.185)30.3 (1.193) 38.0 (1.496)38.2 (1.504) 14.9 (.587)15.1 (.594) 11.8 (.463)12.2 (.480) 8.9 (.350)9.6 (.378) hex nut m4 (4 places) 0.75 (.030)0.85 (.033) 12.6 (.496)12.8 (.504) 25.2 (0.992)25.4 (1.000) 1.95 (.077)2.14 (.084) * source drain gate * r = 4.0 (.157) (2 places) 4.0 (.157)4.2 (.165) (2 places) w=4.1 (.161)w=4.3 (.169) h=4.8 (.187)h=4.9 (.193) (4 places) 3.3 (.129)3.6 (.143) * source source terminals are shortedinternally. current handling capability is equal for either source terminal. apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. isotop ? is a registered trademark of sgs thomson. figure 19, turn-off switching waveforms and definitions figure 18, turn-on switching waveforms and definitions drain current drain voltage gate voltage t j 125c 10% 0 t d(off) t f 90% 90% i d d.u.t. v ds figure 20, inductive switching test circuit v dd g apt2x101d20 switching energy drain current drain voltage gate voltage t j 125c switching energy 10% t d(on) 90% 5% t r 5% 10% downloaded from: http:///
|
